Related Experiment Video
Updated: Jun 20, 2026
05:57
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Optically controlled transmission of InGaAsP epilayers
Optics Letters
|September 11, 2009
Summary
Optical excitation of InGaAsP epilayers shows a 20% transmission change near the 1.3 micrometer band gap. This optical switching is limited by carrier lifetimes of approximately 2 nanoseconds.
Area of Science:
- Optoelectronics
- Semiconductor physics
- Materials science
Background:
- Indium gallium arsenide phosphide (InGaAsP) epilayers are crucial for optoelectronic devices.
- Understanding their optical properties under excitation is key for device optimization.
Purpose of the Study:
- To investigate the optical transmission changes in InGaAsP epilayers under optical excitation.
- To characterize the switching dynamics and identify limiting factors.
Main Methods:
- Optical excitation of InGaAsP epilayers lattice-matched to InP substrates at normal incidence.
- Measurement of transmission changes near the band gap wavelength (1.3 micrometers).
- Analysis of switching dynamics and carrier lifetimes.
Main Results:
- Observed a significant 20% transmission change near the 1.3 micrometer band gap.
- A 0.5-mW pump beam at 790 nm induced this change.
- Switching dynamics were found to be limited by carrier lifetimes of approximately 2 nanoseconds.
Conclusions:
- The experiments demonstrate efficient optical switching in InGaAsP epilayers.
- A simple model based on parabolic bands and direct electronic transitions accurately describes the observed phenomena.
- These findings are relevant for developing advanced optoelectronic devices.
