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Related Concept Videos

Maximum Power Transfer01:16

Maximum Power Transfer

Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Cascaded Op Amps01:16

Cascaded Op Amps

Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
BJT Amplifiers01:14

BJT Amplifiers

Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role extends...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
Small-Signal Analysis of BJT Amplifiers01:21

Small-Signal Analysis of BJT Amplifiers

Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.

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Related Experiment Video

Updated: Jun 20, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

High-power and high-spatial-coherence broad-area power amplifier.

J R Andrews, G L Schuster

    Optics Letters
    |September 25, 2009
    PubMed
    Summary

    This study demonstrates a high-power AlGaAs amplifier achieving 425 mW output power. The amplifier maintains excellent spatial coherence, crucial for advanced laser applications.

    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers
    • Materials Science

    Background:

    • Broad-area semiconductor amplifiers are essential for high-power laser systems.
    • Maintaining beam quality and spatial coherence is critical for efficient power scaling.

    Purpose of the Study:

    • To characterize the performance of a broad-area Aluminum Gallium Arsenide (AlGaAs) amplifier.
    • To evaluate the power output, beam divergence, and spatial coherence of the amplified laser light.

    Main Methods:

    • Utilized a continuous-wave (cw) AlGaAs amplifier.
    • Measured total output power, single-lobe power, beam divergence (FWHM), and aperture size.
    • Quantified spatial coherence of the amplifier output and mutual spatial coherence with the master oscillator.

    Related Experiment Videos

    Last Updated: Jun 20, 2026

    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
    10:17

    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

    Published on: July 12, 2017

    Main Results:

    • Achieved 425 mW total output power with 342 mW in a single lobe.
    • Single-lobe divergence was 1.02 times the diffraction limit (0.483 degrees FWHM) from an 87.4-microm aperture.
    • Master oscillator input power was 70 mW.
    • Output spatial coherence measured at 0.97, with mutual spatial coherence at 0.96.

    Conclusions:

    • The AlGaAs amplifier demonstrates efficient high-power operation while preserving excellent beam quality.
    • High spatial coherence is maintained, indicating suitability for applications requiring precise beam control.
    • The results highlight the potential of broad-area AlGaAs amplifiers for scalable, high-performance laser sources.