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Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

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Normal-incidence x-ray mirror for 7 nm.

D G Stearns, R S Rosen, S P Vernon

|September 25, 2009

Summary

This summary is machine-generated.

Ruthenium (Ru) and Boron Carbide (B4C) multilayer structures were fabricated using sputtering. Optimized structures achieved 20% reflectivity at 7.2 nm, but annealing degraded performance due to interface diffusion.

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Area of Science:

Materials Science
Thin Film Technology
Surface Science

Background:

Multilayer (ML) structures are crucial for various optical and electronic applications.
Ruthenium (Ru) and Boron Carbide (B4C) are promising materials for advanced thin film devices.
Understanding interface properties is key to optimizing ML structure performance.

Purpose of the Study:

To fabricate and characterize Ru/B4C multilayer structures.
To investigate the relationship between microstructure and normal-incidence reflectivity.
To assess the thermal stability of the Ru/B4C interfaces.

Main Methods:

Direct current (dc) magnetron sputtering for ML fabrication.
X-ray diffraction (XRD) for structural analysis.
High-resolution transmission electron microscopy (HRTEM) for interface characterization.
Synchrotron radiation for normal-incidence reflectivity measurements.

Main Results:

Successfully grown Ru/B4C ML structures with smooth and abrupt interfaces under optimal conditions.
Achieved a high normal-incidence reflectivity of 20% at a wavelength of 7.2 nm.
Observed a decrease in reflectivity upon annealing at 500°C due to interdiffusion and compound formation at the interfaces.

Conclusions:

Optimal deposition parameters are critical for achieving high-quality Ru/B4C ML structures.
The interfaces are sensitive to thermal treatment, impacting reflectivity.
These findings provide insights for designing stable and efficient Ru/B4C-based optical coatings.