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Published on: July 22, 2013
A nanosized photodetector fabricated by electron-beam-induced deposition
K Makise1, K Mitsuishi, M Shimojo
1High Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-3003, Ibaraki, Japan. Makise.Kazumasa@nims.go.jp
Abstract:
A sensitive nanosized molybdenum oxide (MoO(x)) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO(x) had a conductivity approximately 300 S cm(-1). After 2 h annealing at 573 K, the conductivity of nanowires decreased 10 times to approximately 30 S cm(-1) and MoO(x) had photoconductivity. Nanosized MoO(x) wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.
