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Related Experiment Video

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Measurement of Cellular Chemotaxis with ECIS/Taxis

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Published on: April 1, 2012

New technique for measuring carrier mobility using a modified boxcar integrator.

Kyung-Ryang Wee¹, Won-sik Han, Ho-Jin Son

¹Department of Materials Chemistry, Korea University, Sejong Campus, Chochiwon, Chung-nam 339-700, Republic of Korea.

The Review of Scientific Instruments

|October 2, 2009

Summary

A novel technique enhances signal-to-noise ratios for measuring drift carrier mobility in organic semiconductors. This method accurately determined hole mobility in NPB thin films, even at low electric fields.

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Area of Science:

Organic electronics
Materials science
Semiconductor physics

Background:

Accurate measurement of drift carrier mobility is crucial for understanding and optimizing organic electronic devices.
Existing techniques can be limited by low signal-to-noise ratios or require high electric fields.

Purpose of the Study:

To develop and validate a new, sensitive method for measuring drift carrier mobility.
To improve signal processing for transient photocurrent measurements.

Main Methods:

Modification of a boxcar integrator for delay-time scanning using decimal counters.
Repeated integration of transient photocurrent signals.
Signal processing to recover original photocurrent with enhanced signal-to-noise ratios.

Main Results:

Successfully measured the hole mobility of a 4,4(')-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB) thin film.
Calculated NPB hole mobility as 5.84x10(-4) cm(2) V(-1) s(-1) at an electric field of 2.5x10(4) V cm(-1).
Demonstrated enhanced signal-to-noise ratios in recovered photocurrent data.

Conclusions:

The developed technique offers a robust method for drift carrier mobility measurements.
This technique is particularly valuable for low electric field or low signal-to-noise ratio scenarios.
The method shows promise for characterizing organic semiconductor materials like NPB.