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Published on: May 10, 2021
Control of the anomalous hall effect by doping in Eu(1-x)La(x)TiO(3) thin films
K S Takahashi1, M Onoda, M Kawasaki
1Cross-correlated Materials Research Group (CMRG), Advanced Science Institute, RIKEN, Wako 351-0198, Japan.
Abstract:
The anomalous Hall effect (AHE) has been studied for epitaxial films of Eu(1-x)La(x)TiO(3), in which band filling can be controlled by doping x without undesired changes in magnetization. This system has a simple band structure near the conduction band bottom, which makes it possible to design the AHE. As expected, the anomalous Hall resistivity shows a nonmonotonic change as a function of the carrier density accompanied with the sign reversal around n=2.4 x 10(20) cm(-3). This opens a possibility to control the AHE by devising the material, structure, and doping level.
