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Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation
Published on: February 25, 2017
Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals.
H H J E Kicken1, I Barbu, R W van der Heijden
1COBRA Research Institute and Center for NanoMaterials, Eindhoven University of Technology, Eindhoven, The Netherlands. h.h.j.e.kicken@tue.nl
Optics Letters
|October 14, 2009
Summary
Researchers created wavelength-sized point defect cavities in InP/InGaAsP/InP photonic crystals. These cavities show tunable frequencies when infiltrated with liquid crystal, offering potential for photonic device applications.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Two-dimensional photonic crystals (2DPCs) offer unique light manipulation properties.
- Integrating defect cavities into 2DPCs is crucial for developing advanced photonic devices.
- Indium Phosphide (InP) based materials are vital for optoelectronic applications.
Purpose of the Study:
- To report wavelength-sized point defect cavities in deeply etched InP/InGaAsP/InP 2DPCs.
- To investigate the quality factor (Q-factor) of these cavities.
- To demonstrate frequency tuning via material infiltration.
Main Methods:
- Fabrication of deeply etched InP/InGaAsP/InP 2DPCs.
- Characterization of point defect cavities coupled to access waveguides.
- Systematic variation of the number of surrounding hole rows.
- Infiltration of cavities with liquid crystal for tuning experiments.
Main Results:
- Achieved wavelength-sized point defect cavities with a measured Q-factor of 60.
- Demonstrated that the Q-factor is sensitive to the number of defect rows.
- Successfully tuned the cavity frequency by infiltrating the holes with liquid crystal.
Conclusions:
- The reported point defect cavities in InP-based 2DPCs exhibit performance comparable to existing cavity designs.
- The demonstrated frequency tuning capability is promising for tunable photonic circuits.
- These findings contribute to the development of novel optoelectronic devices.

