Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers.

Area of Science:

• Semiconductor Physics
• Optoelectronics
• Laser Technology

Background:

• Broad-waveguide laser diodes are crucial optoelectronic devices.
• Active region position critically influences laser performance.
• Previous studies have not fully explored the impact of active region displacement.

Purpose of the Study:

• To investigate the effect of active region position on broad-waveguide laser diode performance.
• To compare laser performance with active regions displaced towards the p-cladding, n-cladding, or centrally located.
• To identify optimal active region placement for enhanced laser output power.

Main Methods:

• Utilized device simulation to model laser performance under varying active region positions.
• Fabricated and experimentally tested broad-waveguide laser diodes with different active region placements.
• Quantitatively compared output power and other performance metrics across all tested configurations.

Main Results:

• Simulations predicted superior performance for lasers with active regions shifted towards the p-cladding.
• Experimental results confirmed simulations, showing enhanced performance for p-cladding displaced devices.
• Maximum output power increased by up to 25% in lasers with the active region displaced towards the p-cladding layer.

Conclusions:

• The position of the active region is a key design parameter for broad-waveguide laser diodes.
• Displacing the active region towards the p-cladding layer offers a significant advantage in maximizing output power.
• This finding provides valuable insights for the design and fabrication of high-performance laser diodes.