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Related Experiment Video

Updated: Jan 23, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area

J Seidl¹, J G Gluschke¹, X Yuan^2,3

¹School of Physics , University of New South Wales , Sydney NSW 2052 , Australia.

|June 27, 2019

Summary

This summary is machine-generated.

We developed a method to grow precise indium arsenide (InAs) nanofins for advanced electronic devices. These nanofins offer new design possibilities and show promising performance for quantum information applications.

Keywords:

Hall effect Nanofin nanowires selective area epitaxy

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

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Published on: July 26, 2016

Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Bottom-up epitaxial growth offers benefits for semiconductor nanostructures.
Existing nanostructures like nanowires lack sufficient spatial dimensions for complex device designs.
Indium arsenide (InAs) is a promising material for high-mobility electronic devices.

Purpose of the Study:

To develop a method for growing rectangular InAs nanofins with controlled dimensions.
To enable the fabrication of InAs nanofin-based devices for electrical characterization.
To explore the potential of InAs nanofins for future quantum information applications.

Main Methods:

Dielectric-templated selective-area epitaxy for controlled nanofin growth.
Transfer of freestanding nanofins onto a separate substrate for device fabrication.
Fabrication of devices with multiple contacts, global back-gates, and local top-gates.

Main Results:

Achieved deterministic control over InAs nanofin length, width, and height.
Measured 3D electron densities of 2.5-5 × 10^17 cm^-3 and surface accumulation layer densities of 3-6 × 10^12 cm^-2.
Obtained high Hall mobilities (up to 1200 cm^2/(V s)) and field-effect mobilities (up to 4400 cm^2/(V s)).
Observed quantum interference effects at temperatures up to 20 K.

Conclusions:

The developed method enables the growth of high-quality InAs nanofins suitable for device fabrication.
InAs nanofins provide enhanced design flexibility compared to nanowires.
These nanofins demonstrate excellent electrical properties and potential for complex quantum devices.