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Optics Express|April 11, 2014
Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasersM Lysevych, H H Tan, F Karouta, et al.Optics Express|April 11, 2013
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasersM Lysevych, H H Tan, F Karouta, et al.The Review of Scientific Instruments|May 6, 2010
A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signalQ Li, H H Tan, C JagadishNanoscale|September 6, 2017
InP-In<sub>x</sub>Ga<sub>1-x</sub>As core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength rangeH A Fonseka, A S Ameruddin, P Caroff, et al.Scientific Reports|October 16, 2015
Optical design of nanowire absorbers for wavelength selective photodetectorsS Mokkapati, D Saxena, H H Tan, et al.Journal of Nanoscience and Nanotechnology|April 2, 2010
Growth and characterization of self-assembled InAs/InP quantum dot structuresS Barik, H H Tan, J Wong-Leung, et al.Nanotechnology|August 7, 2012
Direct-write non-linear photolithography for semiconductor nanowire characterizationP Parkinson, N Jiang, Q Gao, et al.Nanoscale|September 18, 2015
Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowiresA S Ameruddin, P Caroff, H H Tan, et al.Nanotechnology|October 18, 2017
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistorsA R Ullah, H J Joyce, H H Tan, et al.Journal of Nanoscience and Nanotechnology|August 14, 2003
Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structuresX Q Liu, W Lu, S C Shen, et al.Pageof 15