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Updated: Jun 19, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Improvements in the X-ray analytical capabilities of a scanning transmission electron microscope by
M Watanabe1, D W Ackland, A Burrows
1Department of Materials Science and Engineering/Center for Advanced Materials and Nanotechnology, Lehigh University, Bethlehem, PA 18015, USA. masashi.watanabe@lehigh.edu
Abstract:
A Nion spherical-aberration (Cs) corrector was recently installed on Lehigh University's 300-keV cold field-emission gun (FEG) Vacuum Generators HB 603 dedicated scanning transmission electron microscope (STEM), optimized for X-ray analysis of thin specimens. In this article, the impact of the Cs-corrector on X-ray analysis is theoretically evaluated, in terms of expected improvements in spatial resolution and analytical sensitivity, and the calculations are compared with initial experimental results. Finally, the possibilities of atomic-column X-ray analysis in a Cs-corrected STEM are discussed.
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