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Updated: Jun 19, 2026

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'
1Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan. jjlin@mail.nctu.edu.tw
Nanotechnology
|October 22, 2009
Abstract:
We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

