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Related Experiment Video

Updated: Jun 19, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Normal-incidence grating couplers in Ge-Si.

J Sarathy, R A Mayer, K Jung

    Optics Letters
    |October 22, 2009
    PubMed
    Summary

    We developed a grating coupler integrated with a Germanium-Silicon (GeSi) waveguide for efficient light coupling. This integrated device shows promising performance for optical applications.

    Area of Science:

    • Photonics
    • Materials Science
    • Integrated Optics

    Background:

    • Integrated optical devices require efficient methods for coupling light into waveguides.
    • Germanium-Silicon (GeSi) is a promising material for integrated photonics due to its compatibility with silicon fabrication processes.

    Purpose of the Study:

    • To design, fabricate, and test a normal-incidence grating coupler monolithically integrated with a GeSi rib waveguide.
    • To theoretically analyze the performance of the grating coupler using coupler-mode theory.

    Main Methods:

    • Monolithic integration of a 0.33-microm-period grating coupler with a Ge(0.04)Si(0.96) waveguide.
    • Fabrication and experimental testing of the integrated device.
    • Theoretical analysis using coupler-mode theory to predict coupling efficiency and angular dependence.

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    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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    Published on: July 18, 2015

    Related Experiment Videos

    Last Updated: Jun 19, 2026

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
    06:57

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

    Published on: July 17, 2020

    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
    07:50

    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

    Published on: July 17, 2015

    Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System
    12:08

    Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System

    Published on: July 18, 2015

    Main Results:

    • A measured coupling efficiency of 6.5% at normal incidence was achieved, closely matching the theoretical prediction of 6.9%.
    • The measured full width at half maximum (FWHM) of the acceptance angle was 5 degrees, compared to the theoretical prediction of 3 degrees.

    Conclusions:

    • The monolithically integrated GeSi grating coupler demonstrates efficient light coupling at normal incidence.
    • The experimental results validate the theoretical predictions, confirming the viability of this integrated approach for photonic applications.