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Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Diode-pumped passively Q-switched picosecond microchip lasers.

J J Zayhowski, C Dill Iii

    Optics Letters
    |October 27, 2009
    PubMed
    Summary

    New microchip lasers using Nd(3+):YAG and Cr(4+):YAG generate high-peak-power ultrashort pulses. These passively Q-switched lasers achieve 11-microJ pulses with 337-ps duration at 6 kHz.

    Area of Science:

    • Lasers and Photonics
    • Materials Science

    Background:

    • Microchip lasers offer compact and efficient laser solutions.
    • Passively Q-switched lasers utilize saturable absorbers for pulse generation.

    Purpose of the Study:

    • To construct and characterize passively Q-switched microchip lasers.
    • To investigate the performance of Nd(3+):YAG and Cr(4+):YAG materials in microchip laser designs.

    Main Methods:

    • Fabrication of microchip lasers by bonding Nd(3+):YAG and Cr(4+):YAG.
    • Pumping the lasers with a fiber-coupled diode laser.
    • Characterization of pulse energy, duration, repetition rate, and mode quality.

    Main Results:

    • Achieved 11-microJ pulse energy with 337-ps duration.

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  • Operated at a 6 kHz pulse repetition rate in a single-frequency TEM(00) mode.
  • Exceeded 180 MW/cm(2) peak power.

    • Conclusions:

    • Demonstrated the effectiveness of Nd(3+):YAG and Cr(4+):YAG in high-performance microchip lasers.
    • Highlighted the potential for high peak power generation in compact laser systems.