Related Experiment Video
Updated: Jun 19, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Laser characteristics of low-threshold high-efficiency Nd:Sr(5)(VO(4))(3)F crystal
Abstract:
The absorption spectrum of a new crystal, Nd:Sr(5)(VO(4))(3)F (Nd:S-VAP), was measured, which showed that Nd:S-VAP can be suitably pumped at 583.0 and 809.0 nm as well as with a xenon f lash lamp. With a tunable dye laser (570-600 nm) and a xenon f lash lamp as pump sources, respectively, the free-running and Q-switched outputs with BDN dye film were realized at 1.065 microm. For the tunable dye-laser pump source the threshold energy is 2 mJ and the slope eff iciency is 50%, while for the xenon f lash-lamp pump source the lowest threshold energy is 130 mJ and the highest slope efficiency is 1.3%. The laser characteristics, such as the emission spectrum, the polarization, the output energy, and the pulse width, were measured. In addition, the prospect of a Nd:S-VAP crystal for low-threshold, high-efficiency miniature lasers is discussed.

