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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
Published on: December 16, 2011
Large area nanoscale patterning of silicon surfaces by parallel local oxidation
N S Losilla1, J Martínez, R García
1Instituto de Microelectrónica de Madrid, CSIC, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain.
Nanotechnology
|October 31, 2009
Summary
A polymethylmethacrylate (PMMA) film improves parallel local oxidation on silicon surfaces. This technique enhances pattern reproducibility and aspect ratios for fabricating silicon nanostructures.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Parallel local oxidation is a key technique for nanofabrication.
- Achieving high homogeneity and reproducibility in this process is challenging.
Purpose of the Study:
- To improve the homogeneity and reproducibility of parallel local oxidation.
- To develop a method for fabricating silicon nanostructures and templates.
Main Methods:
- Introducing a polymethylmethacrylate (PMMA) film between a stamp and a silicon surface.
- Applying a bias voltage for pattern formation.
- Utilizing a step and repeat technique for large-scale patterning.
- Removing the PMMA layer using acetone etching.
Main Results:
- The PMMA film ensured homogeneous contact, significantly improving process uniformity.
- Oxide nanostructures with enhanced aspect ratios were achieved compared to methods without PMMA.
- The patterning process demonstrated reproducibility over centimeter length scales.
Conclusions:
- The use of a PMMA interlayer is an effective strategy to enhance parallel local oxidation.
- This method enables the fabrication of high-quality silicon nanostructures for applications like organic molecule growth templates.
