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Updated: Jun 19, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Reflection-geometry photorefractive quantum wells.

D D Nolte, I Lahiri, M R Melloch

    Optics Letters
    |November 3, 2009
    PubMed
    Summary

    This study demonstrates the first photorefractive AlGaAs/GaAs quantum wells in reflection geometry. Researchers achieved high two-wave mixing gains using the quantum-confined Stark effect.

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    Area of Science:

    • Semiconductor Physics
    • Optoelectronics
    • Materials Science

    Background:

    • Photorefractive materials are crucial for optical signal processing.
    • AlGaAs/GaAs quantum wells offer unique optoelectronic properties.
    • The quantum-confined Stark effect influences material optical properties.

    Purpose of the Study:

    • To demonstrate photorefractive AlGaAs/GaAs quantum wells in reflection geometry.
    • To investigate the use of the quantum-confined Stark effect in this configuration.
    • To achieve high optical gain in a novel photorefractive setup.

    Main Methods:

    • Utilizing AlGaAs/GaAs multiple quantum wells.
    • Operating in a reflection geometry with counterpropagating beams.
    • Employing the quantum-confined Stark effect to create gratings.

    Main Results:

    • First demonstration of photorefractive AlGaAs/GaAs quantum wells in reflection geometry.
    • Achieved high two-wave mixing gains up to 1500 cm⁻¹.
    • Observed combined absorptive and photorefractive gains under reverse bias.

    Conclusions:

    • Photorefractive AlGaAs/GaAs quantum wells are feasible in reflection geometry.
    • The quantum-confined Stark effect is effective for grating formation.
    • This approach enables high optical gain for optoelectronic applications.

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