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Improved model-based infrared reflectrometry for measuring deep trench structures.

Chuanwei Zhang¹, Shiyuan Liu, Tielin Shi

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.

Journal of the Optical Society of America. A, Optics, Image Science, and Vision

|November 4, 2009

Summary

This summary is machine-generated.

This study introduces corrected effective medium approximation (CEMA) and an artificial neural network (ANN) with Levenberg-Marquardt (LM) algorithm for improved model-based infrared reflectrometry (MBIR). These methods enable fast and accurate characterization of deep trench structures in microelectronics.

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Area of Science:

Microelectronics Engineering
Optical Metrology
Materials Science

Background:

Accurate characterization of high-aspect-ratio deep trench structures is critical in microelectronics fabrication.
Existing model-based infrared reflectrometry (MBIR) methods require precise trench modeling and rapid parameter extraction for success.

Purpose of the Study:

To develop an enhanced MBIR metrology for accurate and fast characterization of deep trench structures.
To introduce a novel modeling approach and a hybrid algorithm for improved measurement efficiency and precision.

Main Methods:

Proposed a corrected effective medium approximation (CEMA) for accurate reflectivity calculation of deep trench structures.
Developed a combined artificial neural network (ANN) and Levenberg-Marquardt (LM) algorithm for robust geometric parameter extraction from reflectance spectra.

Main Results:

The CEMA model demonstrated accurate and fast reflectivity calculations for deep trenches.
The ANN-LM algorithm provided robust and rapid extraction of trench geometric parameters.
Validated methods through simulations and experimental work on typical deep trench structures.

Conclusions:

The improved MBIR metrology, utilizing CEMA and ANN-LM, achieves highly accurate measurement results.
The developed approach significantly enhances computation speed for deep trench characterization.
This advancement offers a powerful tool for microelectronics metrology.