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Microstructural study of the polymorphic transformation in pentacene thin films.

Yosuke Murakami1, Shigetaka Tomiya, Naoki Koshitani

  • 1Advanced Materials Laboratories, Sony Corporation, Okata, Atsugi, Kanagawa 243-0021, Japan.

Physical Review Letters
|November 13, 2009
PubMed
Summary

Polymorphic transformation in pentacene thin films was directly observed. This transformation, from thin-film to bulk phase, was driven by compressive stress near grain boundaries on silicon oxide substrates.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Surface Science

Background:

  • Pentacene thin films are crucial organic semiconductors.
  • Understanding phase transformations is key to device stability.
  • Polymorphism in organic thin films affects electronic properties.

Purpose of the Study:

  • To provide the first direct evidence of polymorphic transformation in pentacene thin films.
  • To investigate the mechanisms and driving forces behind this transformation.
  • To analyze the role of substrate interfaces and grain boundaries.

Main Methods:

  • High-resolution cross-sectional transmission electron microscopy (HR-XCTEM).
  • Observation of pentacene thin films deposited on silicon oxide substrates.

Main Results:

  • Directly observed polymorphic transformation from the thin-film phase to the bulk phase in pentacene.
  • Transformation preferentially occurred near polycrystalline grain boundaries with concave surfaces.
  • Compressive stress induced by grain boundaries identified as the primary driving force.
  • Lattice mismatch between phases contributes to structural defect formation.

Conclusions:

  • Grain boundary-induced compressive stress is a key factor in pentacene polymorphic transformation.
  • Structural defects arise from lattice mismatch during phase transition.
  • Findings offer insights into controlling pentacene thin-film structure and stability.