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Electrically pumped laser oscillation of C-band InAs quantum dot vertical-cavity surface-emitting lasers on InP(311)B
Optics Express
|August 13, 2025
Summary
Researchers demonstrate electrically pumped C-band InAs quantum dot vertical-cavity surface-emitting lasers (QD VCSELs). These lasers show potential for optical communication, operating at room temperature with specific polarization characteristics.
Area of Science:
- Optoelectronics
- Semiconductor Lasers
- Nanotechnology
Background:
- Vertical-cavity surface-emitting lasers (VCSELs) are crucial for optical communications.
- Indium Arsenide (InAs) quantum dots offer unique optoelectronic properties.
- Fabrication on specific substrate orientations like InP(311)B presents challenges.
Purpose of the Study:
- To demonstrate electrically pumped C-band InAs quantum dot vertical-cavity surface-emitting lasers (QD VCSELs).
- To investigate the performance characteristics of these novel QD VCSELs.
- To explore their potential as light sources for optical communication systems.
Main Methods:
- Utilizing InAs quantum dots on InP(311)B substrates.
- Applying a strain compensation technique during fabrication.
- Performing room-temperature pulsed operation measurements.
Main Results:
- Achieved electrically pumped laser oscillation in C-band QD VCSELs.
- Observed a threshold current of 13 mA and an output power of 0.17 mW at 25 mA.
- Demonstrated linearly polarized emission along the InP[-233] direction.
Conclusions:
- Successfully demonstrated the first electrically pumped C-band InAs QD VCSELs.
- These devices show promising performance for optical communication applications.
- The linear polarization characteristic is a key feature for specific transceiver designs.
