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Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays
Chi-Chang Hong1, Hyeyoung Ahn, Chen-Ying Wu
1Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, Republic of China.
Abstract:
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa(1-x)N) nanorod arrays. The formation of InxGa(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay.
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