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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Single ZnO nanobelt based field effect transistors (FETs).
Y K Park1, Ahmad Umar, E W Lee
1School of Semiconductor and Chemical Engineering, BK 21 Centre for Future Energy Materials and Devices and Nanomaterials Processing Research Centre, Chonbuk National University, Jeonju 561-756, South Korea.
Journal of Nanoscience and Nanotechnology
|November 14, 2009
Summary
This study investigated the electrical properties of zinc oxide (ZnO) nanobelts using field-effect transistors (FETs). Passivation with PMMA significantly enhanced the performance of ZnO nanobelt FETs, improving mobility and carrier concentration for potential electronic applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Single zinc oxide (ZnO) nanobelts are promising for nanodevices.
- Understanding their electrical properties is crucial for applications.
- Field-effect transistors (FETs) are used to probe these properties.
Purpose of the Study:
- To examine the electrical characteristics of single ZnO nanobelts.
- To evaluate the impact of passivation on device performance.
- To explore the potential of ZnO nanostructures in electronics and photonics.
Main Methods:
- ZnO nanobelts were synthesized using a non-catalytic thermal evaporation method.
- Single nanobelt field-effect transistors (FETs) were fabricated.
- Electrical properties were measured before and after passivation with polymethyl methacrylate (PMMA).
Main Results:
- Passivation with PMMA significantly improved the electrical performance of ZnO nanobelt FETs.
- Field-effect mobility increased from 21.3 cm²/V·s (non-passivated) to 59 cm²/V·s (passivated).
- Carrier concentration and transconductance also showed marked improvements after passivation.
Conclusions:
- PMMA passivation effectively reduces surface-related charge trapping in ZnO nanobelts.
- Passivated ZnO nanobelt FETs demonstrate superior electrical characteristics.
- These findings highlight the potential of ZnO nanostructures for advanced electronic and photonic devices.
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