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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Single ZnO nanowire based high-performance field effect transistors (FETs)
Yong Kyu Park1, Ahmad Umar, Jin-Seok Kim
1School of Semiconductor and Chemical Engineering, BK21 Centre for Future Energy Materials and Devices, Nanomaterials Processing Research Centre, Chonbuk National University, Jeonju 561756, South Korea.
Journal of Nanoscience and Nanotechnology
|November 14, 2009
Summary
Fabricating top-gate field-effect transistors (FETs) with zinc oxide (ZnO) nanowires yielded superior electrical properties compared to back-gate designs. This study highlights ZnO nanowire FETs for enhanced electronic applications.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Single zinc oxide (ZnO) nanowires are promising for electronic devices.
- Fabricating field-effect transistors (FETs) is crucial for characterizing nanowire electrical properties.
Purpose of the Study:
- To investigate and compare the electrical properties of ZnO nanowire-based FETs using two distinct gate configurations.
- To evaluate the impact of fabrication approach on device performance.
Main Methods:
- Synthesized ZnO nanowires via non-catalytic thermal evaporation.
- Fabricated back-gate and top-gate FETs using electron beam lithography and photolithography.
- Characterized structural and optical properties of ZnO nanowires.
Main Results:
- Well-crystallized ZnO nanowires with wurtzite hexagonal phase and good optical properties were obtained.
- Top-gate FETs demonstrated higher peak transconductance (approx. 7.4 nS) than back-gate FETs (approx. 3.2 nS).
- Field-effect mobility was significantly higher in top-gate FETs (7.87 cm²/V·s) compared to back-gate FETs (3.4 cm²/V·s).
Conclusions:
- Top-gate FETs fabricated with ZnO nanowires exhibit superior electrical performance.
- The top-gate approach is more effective for realizing high-performance ZnO nanowire electronic devices.
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