Field-effect and frequency dependent transport in semiconductor-enriched single-wall carbon nanotube network device

Manu Jaiswal1, C S Suchand Sangeeth, Wei Wang

  • 1Department of Physics, Indian Institute of Science, Bangalore 560012, India.

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Drift Current:
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Schottky Barriers
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