Modeling a-SiC:H tandem pinpin and pinip photodiodes for color sensor application

The present paper reports the optical properties of multilayer structures composed by p-i-n cells based on a-SiC:H or a-Si:H material. Different structures are studied in order to obtain image sensors that accomplish color filtering in addition to image pattern recognition. A simple theoretical model is developed to explain sensors behavior and to derive the optical-readout experimental procedure. Electrical models for the sensors are established for simulation purposes and to compare photocurrent signals with experimental data. A numerical simulation of the JV characteristic and of the spectral response is also presented in order to show possible future optimization of the device. Two main structures are studied, namely p-i-n/p-i-n and p-i-n/n-i-p tandem cells.