Magnetron sputtered nc-Al/alpha-Al2O3 nanocomposite thin films for nonvolatile memory application

Area of Science:

• Materials Science
• Nanotechnology
• Solid State Physics

Background:

• Nanocomposite thin films offer unique properties for electronic applications.
• Aluminum-based materials are widely explored for their electrical characteristics.
• Controlling the structure of nanocomposites is key to tailoring their functionality.

Purpose of the Study:

• To develop and characterize nanocrystalline aluminum embedded in an amorphous aluminum oxide matrix (nc-Al/a-Al2O3).
• To investigate the structural properties and confirm the formation of the nc-Al/a-Al2O3 nanocomposite.
• To explore the electrical properties, specifically the memory effect, of the developed thin films.

Main Methods:

• Magnetron sputtering technique was employed to deposit nc-Al/a-Al2O3 films.
• Films were deposited on p-type silicon substrates using a pure aluminum target.
• X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) were used for structural analysis.

Main Results:

• Successful fabrication of nc-Al/a-Al2O3 nanocomposite thin films confirmed.
• Structural analysis verified nanocrystalline Al particles embedded within an amorphous Al2O3 matrix.
• The nc-Al/a-Al2O3 thin films exhibited a distinct memory effect attributed to charge trapping.

Conclusions:

• The study successfully developed nc-Al/a-Al2O3 nanocomposite thin films with potential for memory applications.
• The embedded nanocrystalline aluminum structure within the amorphous aluminum oxide matrix is crucial for the observed memory effect.
• These findings suggest nc-Al/a-Al2O3 films are promising candidates for future non-volatile memory devices.