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Ultrafast transient grating spectroscopy in silicon quantum dots.

Xiaoming Wen1, Lap Van Dao, Peter Hannaford

  • 1School of Chemistry, University of Melbourne, Melbourne 3010, Australia.

Journal of Nanoscience and Nanotechnology
|November 26, 2009
PubMed
Summary

Femto-second transient grating spectroscopy reveals ultrafast carrier dynamics in silicon quantum dots. Phonon-assisted relaxation occurs in picoseconds, followed by slow microsecond recombination.

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Area of Science:

  • Materials Science
  • Quantum Physics
  • Spectroscopy

Background:

  • Silicon quantum dots (Si QDs) are crucial for semiconductor applications.
  • Understanding carrier dynamics in Si QDs is vital for device performance.
  • Indirect semiconductors like silicon require specialized techniques for studying excited carriers.

Purpose of the Study:

  • To investigate ultrafast carrier dynamics in silicon quantum dots embedded in a silicon oxide matrix.
  • To utilize femtosecond transient grating spectroscopy for direct detection of carrier relaxation.
  • To elucidate the mechanisms governing carrier relaxation and recombination in Si QDs.

Main Methods:

  • Femtosecond transient grating spectroscopy was employed.
  • Ultrafast carrier dynamics were measured across various detection wavelengths.

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  • Decay components were analyzed to determine relaxation times.

    • Main Results:

    • Two distinct ultrafast decay components were observed with lifetimes of 800 femtoseconds (fs) and 4 picoseconds (ps).
    • These decay times are attributed to transverse optical and transverse acoustic phonon-assisted relaxation processes.
    • Photoexcited carriers (electrons and holes) were found to be trapped in surface states, leading to slow microsecond-scale recombination.

    Conclusions:

    • Femtosecond transient grating spectroscopy is effective for studying carrier relaxation in indirect semiconductors like Si QDs.
    • Phonon-assisted relaxation plays a significant role in the initial ultrafast dynamics.
    • Surface trapping and slow recombination are key factors in the long-term carrier behavior in Si QDs.