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Updated: Jun 18, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Self-organization of In2S3 quantum dots into fractal nanostructures by electrophoretic deposition
B Vigneashwari1, A K Tyagi, S Dash
1Department of Energy, University of Madras, Chennai 600025, India.
Abstract:
This paper describes the assembly of In2S3 quantum dots by electrophoretic deposition (EPD) and their subsequent self-organization into fractal nanostructures over ITO substrates. The surface morphology and the organization of these dots into nanostructures were analyzed using SEM, HRSEM and AFM techniques. These analyses reveal the existence, under appropriate conditions, of very unique nanoscale structural motifs and scale invariance associated with the assembly. Formation of such a well correlated assembly, although seems to be electric field driven, appears to be dominated by self-organizing mechanism. Such self-organized nano-scale structures consisting of cavities are likely to have fascinating condensed phase transport properties. The paper reports microscopic study of such fractal assemblies using SEM, HTSEM and AFM.

