Related Experiment Video
Updated: Jun 18, 2026
12:19
Multi-Scale Modification of Metallic Implants With Pore Gradients, Polyelectrolytes and Their Indirect Monitoring In vivo
Published on: July 1, 2013
Depth profile characterization of ultra shallow junction implants.
Philipp Hönicke1, Burkhard Beckhoff, Michael Kolbe
1Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany. philipp.hoenicke@ptb.de
Analytical and Bioanalytical Chemistry
|November 27, 2009
Summary
Grazing incidence X-ray fluorescence (GIXRF) offers a promising alternative to secondary ion mass spectrometry (SIMS) for analyzing dopants in silicon ultra shallow junctions (USJs). This technique accurately determines dopant profiles for advanced CMOS technologies.
Area of Science:
- Materials Science
- Analytical Chemistry
- Semiconductor Physics
Background:
- Secondary ion mass spectrometry (SIMS) faces challenges in depth profiling dopants for ultra shallow junctions (USJs) in CMOS technologies.
- New analytical techniques are needed to complement SIMS for precise dopant analysis in these critical applications.
Purpose of the Study:
- To evaluate grazing incidence X-ray fluorescence (GIXRF) as a complementary technique to SIMS for depth profiling dopants in silicon USJs.
- To demonstrate the capability of GIXRF, utilizing X-ray standing waves (XSW), for analyzing boron and arsenic profiles in silicon.
Main Methods:
- GIXRF analysis was performed on silicon wafers implanted with boron and arsenic at various fluences and energies.
- Synchrotron radiation-induced GIXRF measurements were conducted at the Physikalisch-Technische Bundesanstalt (PTB) at BESSY II.
- An absolutely calibrated energy-dispersive detector was used to measure B-Kalpha and As-Lalpha fluorescence for absolute dose determination.
Main Results:
- GIXRF, combined with the X-ray standing wave (XSW) field, effectively probes near-surface layers, providing information on implantation profiles.
- The technique demonstrated sensitivity to near-surface dopant distributions, crucial for USJ analysis.
- Absolute determination of the total retained dose was achieved, and concentration profiles were calculated via ab initio methods.
Conclusions:
- GIXRF is a high-potential technique for depth profiling dopants in silicon for USJ applications, complementing SIMS.
- The XSW field in GIXRF acts as a tunable sensor for in-depth analysis of dopant profiles.
- GIXRF enables accurate and absolute quantification of dopant concentrations in ultra shallow junctions.
