Related Experiment Video
Updated: Jun 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory
Sung-Hoon Hong1, Byeong-Ju Bae, Heon Lee
1Department of Materials Science and Engineering, Korea University, Seoul, Republic of Korea.
Abstract:
Ag and In co-doped SbTe phase change material (AgInSbTe) was used to fabricate nanopillar phase change memory. The AgInSbTe nanopillar type phase change device with 200 nm of diameter was fabricated by nanoimprint lithography and was reversibly changed between the resistances of 10(4) and 10(6) Omega by applying set/reset pulses using conducting atomic force microscopy. Due to the fast crystallization nature of AgInSbTe, the set operation of the device could be done with only 50 ns of set pulse. The fast crystallization nature of AgInSbTe is also responsible for the decrease in reset voltage of devices set with a short pulse.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...

