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Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber
Huapu Pan1, Zhi Li, Andreas Beling
1Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. hp5n@virginia.edu
Optics Express
|December 10, 2009
Abstract:
The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.
