Related Experiment Video
Updated: Jun 17, 2026

11:10
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Optical properties of multisource thermally evaporated III-V semiconductor compounds
1Infrared Division, U.S. Naval OrdnanceLaboratory, Corona, California, USA.
Applied Optics
|January 6, 2010
Summary
This study demonstrates the multisource technique for preparing III-V semiconductor films like Indium Antimonide (InSb) and Indium Arsenide (InAs). These films show promise for optical components, with unique absorption properties compared to bulk materials.
Area of Science:
- Materials Science
- Solid-State Physics
- Optoelectronics
Background:
- III-V semiconductor films are crucial for advanced optical components.
- Controlled layer deposition is essential for precise optical properties.
Purpose of the Study:
- To prepare and characterize III-V semiconductor films using the multisource technique.
- To investigate the optical properties, specifically refractive index dispersion and absorption, of InSb and InAs films.
- To explore the potential of multisource technique for creating III-V solid solutions.
Main Methods:
- Multisource deposition technique for III-V semiconductor films.
- Spectroscopic analysis of refractive index dispersion.
- Investigation of absorption processes and intrinsic edge absorption.
- Preparation of Ga((3/4))In((1/4))Sb solid solutions.
Main Results:
- III-V semiconductor films, including InSb and InAs, were successfully prepared.
- Refractive index dispersion in InSb and InAs films mirrors bulk material behavior.
- Absorption processes due to excess carrier scattering are significantly enhanced in films compared to bulk.
- Intrinsic edge absorption in n-type InAs films follows exponential behavior similar to bulk.
- Solid solutions of III-V mixtures were achieved, enabling parameter studies.
Conclusions:
- The multisource technique is effective for producing III-V semiconductor films with tailored properties.
- Film properties, while similar to bulk in some aspects, exhibit distinct absorption characteristics.
- This method facilitates the study of fundamental semiconductor parameters in solid solutions.
Related Concept Videos
Types of Semiconductors
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

