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Published on: November 11, 2013
Transient memory effect in the photoluminescence of InGaN single quantum wells
Christian Feldmeier1, Masayoshi Abiko, Ulrich T Schwarz
1Yokohama City University, Graduate School of Nanobioscience, Department of Nanosystem Science, 22-2 Seto Kanazawa-ku, 236-0027 Yokohama, Japan.
Abstract:
The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect.
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