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Updated: Jun 17, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Min-Yung Ke1, Tzu-Chun Lu, Sheng-Chieh Yang

  • 1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4,Taipei,106 Taiwan.

Optics Express
|January 7, 2010
PubMed

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