Nondisjunction
Nondisjunction
Crystal Growth: Principles of Crystallization
Imperfections in Crystal Structure: Point, Line and Plane Defects
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Updated: Jun 17, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
1Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA.
No abstract available in PubMed .