Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Equivalent Capacitance01:19

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
Equivalent Capacitance01:19

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
Spherical and Cylindrical Capacitor01:26

Spherical and Cylindrical Capacitor

A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field, calculated by...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Optically addressed spatial light modulators by MBE-grown nipi MQW structures.

Applied optics·2010
Same author

Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures.

Optics letters·2009
Same journal

Multifunctional reconfigurable terahertz metasurface based on vanadium dioxide phase transition: achieving broadband absorption and efficient polarization conversion.

Applied optics·2026
Same journal

High-Q-factor electromagnetically induced transparency utilizing quasi-bound states in the continuum in an all-dielectric terahertz metasurface.

Applied optics·2026
Same journal

Automated stitching interferometry for high-precision metrology of X-ray mirrors.

Applied optics·2026
Same journal

Experimental demonstration of an approach to designing a metal-dielectric DBR resonant cavity structure.

Applied optics·2026
Same journal

High-precision wavefront reconstruction from a single-shot interferogram using a physics-driven hybrid feature calibration network.

Applied optics·2026
Same journal

Ultra-high-Q Fano resonance based on coupled topological corner states in Kagome photonic crystals.

Applied optics·2026
See all related articles

Related Experiment Video

Updated: Jun 17, 2026

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

A thin-film capacitive bolometer.

J Maserjian

    Applied Optics
    |January 16, 2010
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a novel thin-film capacitive bolometer utilizing electron trapping in amorphous dielectric films. Optimized detectors achieve high thermal detectivity (D*) at room temperature, promising advanced infrared sensing applications.

    More Related Videos

    Dynamic Multiparameter Platelet Function Assessment Using a Capacitive Biosensor
    06:32

    Dynamic Multiparameter Platelet Function Assessment Using a Capacitive Biosensor

    Published on: May 2, 2025

    A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
    10:40

    A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

    Published on: April 8, 2018

    Related Experiment Videos

    Last Updated: Jun 17, 2026

    Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
    08:00

    Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

    Published on: March 27, 2018

    Dynamic Multiparameter Platelet Function Assessment Using a Capacitive Biosensor
    06:32

    Dynamic Multiparameter Platelet Function Assessment Using a Capacitive Biosensor

    Published on: May 2, 2025

    A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
    10:40

    A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

    Published on: April 8, 2018

    Area of Science:

    • Materials Science
    • Condensed Matter Physics
    • Infrared Technology

    Background:

    • Capacitive bolometers offer a pathway to sensitive thermal detection.
    • Electron trapping in dielectric films with ionic space charge is a key phenomenon for temperature sensitivity.
    • Existing bolometer technologies face limitations in sensitivity and operating temperature.

    Purpose of the Study:

    • To describe a thin-film capacitive bolometer based on electron trapping effects.
    • To present the theory of operation and experimental validation.
    • To demonstrate the potential for high thermal detectivity (D*) at room temperature.

    Main Methods:

    • Theoretical modeling of electron trapping effects in amorphous dielectric films.
    • Fabrication of capacitive bolometers using anodized Nb(2)O(5) and evaporated Al(2)O-TiO(2) films.
    • Characterization of detector performance, including responsivity, time constant, and thermal detectivity (D*).

    Main Results:

    • Theoretical predictions show good agreement with experimental results from Nb(2)O(5) capacitors.
    • Experimental detectors fabricated on thin-film supports achieved high thermal detectivities (D* > 10^9).
    • Room temperature performance demonstrated responsivities of at least 2 mV/µW and time constants of ~0.05 s.

    Conclusions:

    • The developed thin-film capacitive bolometer effectively utilizes electron trapping for temperature sensing.
    • The technology shows potential for reaching theoretical maximum thermal detectivity (D*) at room temperature.
    • The experimental results validate the feasibility of high-performance infrared detectors for various applications.