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Related Experiment Video

Updated: Jun 20, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Published on: April 1, 2020

Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures.

K K Law, J Maserjian, R J Simes

    Optics Letters
    |September 15, 2009
    PubMed
    Summary
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    Researchers developed an optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i and multiple-quantum-well structures. This device achieves 60% modulation with low control power, showing potential for optical information processing.

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Semiconductor Devices

    Background:

    • Optically controlled modulators are crucial for optical information processing.
    • Developing efficient modulators with low power requirements is an ongoing challenge.

    Purpose of the Study:

    • To demonstrate an optically controlled reflection modulator.
    • To investigate the modulation characteristics of a novel device structure.

    Main Methods:

    • Fabrication of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well on a distributed Bragg reflector using molecular-beam epitaxy.
    • Characterization of modulation depth and differential absorption coefficient.
    • Measurement of reflectance changes with varying control beam power.

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    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

    Published on: October 13, 2017

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    Last Updated: Jun 20, 2026

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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    Published on: April 1, 2020

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
    15:47

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    Published on: November 1, 2013

    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
    12:57

    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

    Published on: October 13, 2017

    Main Results:

    • Achieved approximately 60% modulation in the test structure.
    • Observed a differential change of absorption coefficient of approximately 7500/cm in quantum wells.
    • Detected reflectance changes with control beam power as low as 1.5 microwatts.

    Conclusions:

    • The demonstrated device functions as an effective optically controlled reflection modulator.
    • The structure exhibits high modulation efficiency and sensitivity to low control power.
    • This device holds significant potential for development into optically addressed spatial light modulators for optical information processing.