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Extended dual-grating alignment method for optical projection lithography.

Wangfu Chen1, Wei Yan, Song Hu

  • 1State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.

Applied Optics
|February 2, 2010
PubMed
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A novel dual-grating alignment scheme enhances projection lithography accuracy. This method achieves sub-nanometer resolution, proving independent of illumination fluctuations and wafer-mask gaps.

Area of Science:

  • Optics and Photonics
  • Semiconductor Manufacturing

Background:

  • Accurate wafer alignment is critical for advanced projection lithography.
  • Existing alignment methods face limitations in precision and robustness.

Purpose of the Study:

  • To propose and detail an extended dual-grating alignment scheme for projection lithography.
  • To demonstrate sub-nanometer alignment resolution and robustness.

Main Methods:

  • Extension of the basic dual-grating alignment model.
  • Construction of the extended alignment scheme framework.
  • Detailed determination process for key alignment parameters.

Main Results:

  • Tiny wafer shifts are detectable via fringe displacement or phase variation.

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  • Alignment performance is independent of the wafer-mask gap.
  • Disturbances from illumination fluctuations are negligible.
  • Sub-nanometer alignment resolution is achievable.

    • Conclusions:

    • The proposed extended dual-grating scheme offers superior alignment accuracy for projection lithography.
    • The method is robust against environmental factors like illumination variations.
    • This technique enables high-precision semiconductor manufacturing.