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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Published on: June 23, 2018

Solid-state array cameras.

G Strull, W F List, E L Irwin

|February 2, 2010

Summary

This summary is machine-generated.

This paper details advancements in solid-state imaging technology, focusing on monolithic phototransistor arrays. It covers fabrication, processing, and the evolution of camera systems, highlighting high-density array development.

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Area of Science:

Solid-state physics
Semiconductor device fabrication
Image sensor technology

Background:

Growing interest in solid-state imaging technology.
Westinghouse ATL facilities' contributions to the field.
Development of monolithic arrays of diffused junction phototransistors.

Purpose of the Study:

To present a synopsis of developments in solid-state imaging.
To detail the fabrication process for high-density monolithic arrays.
To showcase the historical progression of camera systems utilizing these arrays.

Main Methods:

Description of the complete processing sequence for array fabrication, from wafer preparation to sensor testing.
Discussion of specialized processing steps for high-yield manufacturing, including surface etching.
Presentation of camera systems in a chronological order, from 1965 to 1972.

Main Results:

Fabrication of high-density monolithic arrays of diffused junction phototransistors.
Successful implementation of specialized processing steps for improved yield.
Development of camera systems with increasing element counts (50x50 to 400x500).

Conclusions:

Solid-state array cameras offer significant freedom in mechanical architecture.
Hybrid scan systems using 1D line arrays are viable alternatives with specific tradeoffs.
The presented developments represent significant progress in totally solid-state imaging.