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Updated: Jun 16, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

100-GHz transistors from wafer-scale epitaxial graphene

Y-M Lin1, C Dimitrakopoulos, K A Jenkins

  • 1IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com

Science (New York, N.Y.)
|February 6, 2010
PubMed

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