Helical motion of an S4 voltage sensor revealed by gating pore currents
William A Catterall1, Vladimir Yarov-Yarovoy
1Department of Pharmacology, University of Washington, Seattle, USA. wcatt@u.washington.edu
Abstract:
The mechanism by which the voltage sensors of voltage-gated ion channels move gating charge during the activation process is a subject of active debate. In this issue of Channels, Gamal El-Din et al. probe the movements of the S4 voltage sensor of Shaker K(+) channels through clever use of omega gating pore currents generated by paired gating-charge mutations. Their results provide strong support for a sliding helix or helical screw mechanism of gating charge movement.
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