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GaAs optical waveguide structures at 10.6-microm wavelength.

M S Chang, W S Chang, B L Sopori

    Applied Optics
    |February 16, 2010
    PubMed
    Summary
    This summary is machine-generated.

    This study compares gallium arsenide (GaAs) waveguide structures for 10.6-microm wavelength applications. Researchers achieved a low 2 dB/cm attenuation rate in a GaAs/gallium arsenide phosphide (GaAsP) waveguide.

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    Using Microwave and Macroscopic Samples of Dielectric Solids to Study the Photonic Properties of Disordered Photonic Bandgap Materials

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    Area of Science:

    • Optoelectronics
    • Semiconductor physics
    • Materials science

    Background:

    • Gallium arsenide (GaAs) based waveguides are crucial for infrared applications.
    • Understanding transmission properties and losses in these waveguides is essential for device performance.
    • Different cladding materials like n(+)GaAs, GaAsP, and AlGaAs offer varying optical and electrical characteristics.

    Purpose of the Study:

    • To compare the fabrication and transmission properties of GaAs/n(+)GaAs, GaAs/GaAsP, and GaAs/AlGaAs waveguide structures.
    • To analyze the impact of free carrier absorption from the substrate on waveguide loss.
    • To experimentally determine the achievable attenuation rates in these structures at 10.6-microm wavelength.

    Main Methods:

    • Fabrication of three distinct waveguide structures: GaAs/n(+)GaAs, GaAs/GaAsP, and GaAs/AlGaAs.
    • Characterization of transmission properties at a 10.6-microm wavelength.
    • Analysis of optical loss mechanisms, specifically free carrier absorption.

    Main Results:

    • Detailed comparison of fabrication processes for the evaluated waveguide types.
    • Transmission properties at 10.6-microm wavelength were characterized for each structure.
    • An experimental attenuation rate of 2 dB/cm was achieved in a single-mode (~7 microm) GaAs/GaAsP waveguide up to 7 cm in length.

    Conclusions:

    • GaAs/GaAsP waveguides demonstrate promising low-loss performance at 10.6-microm wavelength.
    • Free carrier absorption is a significant factor influencing waveguide loss.
    • The achieved attenuation rate suggests potential for practical applications in infrared optoelectronics.