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Excess dissipation in a single-electron box: the Sisyphus resistance.
F Persson1, C M Wilson, M Sandberg
1Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-412 96 Goteborg, Sweden. fredrik.persson@chalmers.se
Nano Letters
|February 17, 2010
Summary
We measured the AC response of a single-electron box (SEB) driven out of equilibrium. A novel mechanism, Sisyphus resistance, explains unexpected energy dissipation, offering potential for precise electrometry.
Area of Science:
- Quantum Computing
- Mesoscopic Physics
- Single-Electron Devices
Background:
- Single-electron boxes (SEBs) are fundamental quantum devices.
- Understanding their response to external stimuli is crucial for quantum information processing.
- Existing circuit models do not fully capture SEB behavior under specific conditions.
Purpose of the Study:
- To investigate the AC response of a single-electron box (SEB).
- To identify the source of excess energy dissipation beyond standard circuit models.
- To explore potential applications of observed phenomena in electrometry.
Main Methods:
- Applied radio frequency (RF) signals to an SEB.
- Utilized frequencies exceeding the electron tunneling rate.
- Drove the SEB system out of thermal equilibrium.
Main Results:
- Observed significantly higher energy dissipation than predicted by simple circuit models.
- Identified a new dissipation mechanism termed 'Sisyphus resistance'.
- Demonstrated a strong gate voltage dependence of this Sisyphus resistance.
Conclusions:
- The Sisyphus resistance mechanism is key to understanding non-equilibrium AC response in SEBs.
- The gate dependence of Sisyphus resistance presents opportunities for advanced electrometry.
- This finding advances the fundamental understanding of quantum dissipation in nanoscale devices.
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