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Excess dissipation in a single-electron box: the Sisyphus resistance
F Persson1, C M Wilson, M Sandberg
1Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-412 96 Goteborg, Sweden. fredrik.persson@chalmers.se
Abstract:
We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
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