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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
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Published on: February 4, 2018

Field-effect-tuned lateral organic diodes.

Bal Mukund Dhar1, Geetha S Kini, Guoqiang Xia

  • 1Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA.

Proceedings of the National Academy of Sciences of the United States of America
|February 18, 2010
PubMed
Summary
This summary is machine-generated.

Researchers developed a new lithographic technique to observe the potential at organic p-n junctions. This method links organic device behavior to surface potential changes, crucial for organic electronics like solar cells.

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Area of Science:

  • Organic electronics
  • Materials science
  • Semiconductor physics

Background:

  • Organic diodes are key components in solar cells and displays.
  • Interface properties between organic semiconductors significantly impact device performance.
  • Characterizing these buried or irregular interfaces is challenging.

Purpose of the Study:

  • To develop a novel method for characterizing organic p-n junctions.
  • To simultaneously measure potential and charge transport at organic interfaces.
  • To investigate the relationship between junction potential and device characteristics.

Main Methods:

  • Fabrication of a lateral organic p-n junction using a fluorinated barrier layer-based lithographic technique.
  • Simultaneous measurement of surface potential and charge transport.
  • Modulation of device characteristics using a gate electrode.

Main Results:

  • First simultaneous observation of potential and charge transport at an organic p-n interface.
  • Device characteristics (current output, rectification ratio) correlate with surface potential changes.
  • Gate electrode strongly and self-consistently modulates junction potentials and current-voltage curves.

Conclusions:

  • The lithographic technique provides a versatile tool for studying organic semiconductor junctions.
  • Observed built-in potentials establish a link between organic and inorganic semiconductor device physics.
  • Investigated potentials may play a critical role in charge separation efficiency for organic photovoltaics.