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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

Design and epitaxy of 1.5 microm InGaAsP-InP MQW material for a transistor laser

Zigang Duan1, Wei Shi, Lukas Chrostowski

  • 1Key Laboratory of Optoelectronic Devices and Systems of the Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, P. R. China. zgduan@szu.edu.cn

Optics Express
|February 23, 2010
PubMed

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