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Investigation of Early Plasma Evolution Induced by Ultrashort Laser Pulses
Published on: July 2, 2012
Optical emission enhancement using laser ablation combined with fast pulse discharge
Weidong Zhou1, Kexue Li, Qinmei Shen
1The institute of information optics, Zhejiang Normal University, Jinhua, 321004, China. wdzhou@zjnu.edu.cn
Optics Express
|February 23, 2010
Summary
A novel high-voltage, fast-pulse discharge circuit combined with laser ablation significantly boosts optical emission from silicon crystals. This method enhances signal intensity by up to 52 times, improving stability and signal-to-noise ratio for elemental analysis.
Area of Science:
- Physics
- Materials Science
- Analytical Chemistry
Background:
- Laser ablation is a technique used for material analysis.
- Optical emission from laser-induced plasma can be weak and unstable.
- Improving signal intensity and stability is crucial for accurate elemental analysis.
Purpose of the Study:
- To develop and characterize a high-voltage, fast-pulse discharge circuit for enhancing optical emission from silicon.
- To investigate the effect of the discharge circuit on plasma emission characteristics.
- To evaluate the improvement in signal intensity, stability, and signal-to-noise ratio.
Main Methods:
- A high-voltage and fast-pulse discharge circuit was designed and integrated with laser ablation.
- The discharge circuit's characteristics, including voltage and current oscillations, were analyzed.
- Optical emission from laser-ablated silicon in the presence and absence of the discharge was measured and compared.
Main Results:
- The discharge circuit exhibited damping and periodical oscillations with a short period (~0.5 µs).
- The discharge automatically initiated approximately 1 µs after laser ablation.
- Optical emission intensity was enhanced up to 52 times compared to standard laser ablation.
- Improved line stability (relative standard deviation) and signal-to-noise (S/N) ratio were achieved.
Conclusions:
- The combined high-voltage, fast-pulse discharge and laser ablation technique effectively enhances optical emission from silicon.
- The method provides significant improvements in signal intensity, stability, and S/N ratio, comparable to double-pulse laser-induced breakdown spectroscopy (DP-LIBS).
- This approach holds promise for advancing future elemental analysis applications.

