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Related Experiment Video

Updated: Jun 16, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Ultra-low-energy all-CMOS modulator integrated with driver.

Xuezhe Zheng¹, Jon Lexau, Ying Luo

¹Sun Microsystems Physical Sciences Center, San Diego, CA 92121, USA. Xuezhe.zheng@sun.com

|February 23, 2010

Summary

This study demonstrates the first sub-picojoule per bit silicon modulator integrated with driver circuits for efficient digital data transmission. The technology achieves low power consumption and stable error-free data transfer, paving the way for faster communication.

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Area of Science:

Photonics and Optical Communications
Silicon Photonics
Integrated Circuits

Background:

Achieving energy-efficient data transmission is critical for high-speed communication systems.
Silicon photonics offers a promising platform for integrated optical devices.

Purpose of the Study:

To demonstrate a silicon modulator with ultra-low energy consumption per bit.
To integrate a silicon modulator with its driver circuit for a digital transmitter.
To evaluate the performance and stability of the integrated device for data transmission.

Main Methods:

Fabrication of a carrier-depletion ring modulator using 130nm SOI CMOS technology.
Flip-chip integration with a 90nm bulk Si CMOS driver circuit.
Testing of the integrated transmitter for power efficiency and data transmission stability.
Small signal measurements to determine modulator bandwidth.

Main Results:

Achieved sub-picojoule per bit (400fJ/bit) operation.
Demonstrated wall-plug power efficiency below 400µW/Gbps.
Successfully transmitted over 1.5 petabits of data error-free at 5Gbps over 3.5 days without tuning.
Measured a 3dB bandwidth exceeding 15GHz for the modulator.

Conclusions:

The integrated silicon modulator achieves record low energy consumption and high data transmission efficiency.
The device demonstrates stable, long-term, error-free operation, compatible with CMOS drive voltages.
Potential for further improvements in data rates and energy efficiency exists.