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Efficient, high-power, narrow-linewidth, continuous-wave quantum-dot semiconductor comb laser.

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We developed a new O-band quantum-dot semiconductor laser for optical interconnects. This laser offers a wide bandwidth and high power, enabling efficient wavelength division multiplexing (WDM) applications.

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Area of Science:

  • Photonics
  • Semiconductor Lasers
  • Optical Communications

Background:

  • Wavelength division multiplexing (WDM) is crucial for high-capacity optical interconnects.
  • Quantum-dot semiconductor lasers offer potential for compact and efficient WDM light sources.

Purpose of the Study:

  • To develop a continuous-wave, O-band quantum-dot semiconductor comb laser.
  • To evaluate its performance for WDM optical interconnects.

Main Methods:

  • Fabrication of a quantum-dot semiconductor laser.
  • Characterization of optical bandwidth, comb spacing, power conversion efficiency, output power, noise, linewidth, and fiber coupling.

Main Results:

  • Achieved 2.2 THz optical bandwidth with 89 comb wavelengths at 25 GHz spacing.
  • Demonstrated >30% peak electrical-to-optical power conversion efficiency and up to 270 mW usable power.
  • Exhibited low relative intensity noise (< -135 dB/Hz), narrow mode linewidth (140 kHz), and mode beating linewidth (50 kHz).
  • Obtained stable far-field output with 75% coupling efficiency to polarization-maintaining fiber.

Conclusions:

  • The developed quantum-dot semiconductor comb laser is suitable for WDM optical interconnects.
  • Its performance metrics meet the demands for high-capacity data transmission.
  • This technology advances the development of efficient and powerful optical communication systems.