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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Status report of the Dresden EBIS/EBIT developments
G Zschornack1, F Grossmann, U Kentsch
1Institute of Applied Physics, Dresden University of Technology, D-01062 Dresden, Germany. g.zschornack@fzd.de
Abstract:
We give an overview about latest developments and measurements with the Dresden electron beam ion source family as compact and economically working table-top sources of highly charged ions. The ion sources are potential tools for various applications such as for use in combination with accelerators in medical particle therapy, as charge breeder or ion trap injector, as ion sources for a new generation of focused ion beam devices and for applications together with time-of-flight secondary mass spectrometers.

