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Boron ion source based on planar magnetron discharge in self-sputtering mode.

V I Gushenets1, A Hershcovitch, T V Kulevoy

  • 1High Current Electronics Institute, Russian Academy of Sciences, Tomsk 634055, Russia.

The Review of Scientific Instruments
|March 3, 2010
PubMed
Summary

A novel boron ion source using a magnetron sputtering device achieves over 99% boron ion fraction. This self-sputtering method offers a competitive alternative for semiconductor applications.

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Area of Science:

  • Physics
  • Materials Science
  • Plasma Science

Background:

  • Boron ion sources are crucial for semiconductor manufacturing.
  • Conventional sources often use boron compounds like BF(3), posing handling challenges.
  • High target temperatures are necessary for efficient boron sputtering due to its low electrical conductivity.

Purpose of the Study:

  • To design and demonstrate a new boron ion source utilizing a planar magnetron sputtering device.
  • To achieve a high boron ion fraction for potential semiconductor industry applications.
  • To evaluate the performance and competitiveness of this novel ion source.

Main Methods:

  • A planar magnetron sputtering device with a thermally isolated boron target was employed.
  • The target was heated to 400°C using an initial low-current, high-voltage discharge.
  • The discharge transitioned to a high-current, low-voltage mode, enabling self-sputtering.
  • Beam analysis was conducted using a time-of-flight system.

Main Results:

  • A discharge power of 16 W was sufficient to reach the target operating temperature.
  • The maximum boron ion fraction in the extracted beam exceeded 99%.
  • The time-averaged boron ion fraction over the pulse length was approximately 95%.

Conclusions:

  • The developed magnetron sputtering ion source effectively produces a high-purity boron ion beam.
  • This boron ion source demonstrates potential as a competitive alternative to existing technologies.
  • Future work includes achieving steady-state operation and integration with a bending magnet for further characterization.